mcl4148, mcl4448 document number 85566 rev. 2.0, 20-aug-10 vishay semiconductors www.vishay.com 1 9612315 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diodes features ? silicon epitaxial planar diodes ? saving space ? hermetic sealed parts ? fits onto sod-323 / sot-23 footprints ? electrical data identical with the devices 1n4148 and 1n4448 respectively ? micromelf package ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? extreme fast switches mechanical data case: micromelf weight: approx. 12 mg cathode band color: black packaging codes/options: tr3 / 10 k per 13" reel (8 mm tape), 10 k/box tr / 2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation ordering code remarks mcl4148 v rrm = 100 v, v f at i f 50 ma = 1 v mcl4148-tr3 or mcl4148-tr tape and reel mcl4448 v rrm = 100 v, v f at i f 100 ma = 1 v mcl4448-tr3 or mcl4448-tr tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 100 v reverse voltage v r 75 v peak forward surge current t p = 1 s i fsm 2a repetitive peak forward current i frm 450 ma forward continuous current i f 200 ma average forward current v r = 0 i fav 150 ma power dissipation p tot 500 mw
www.vishay.com 2 document number 85566 rev. 2.0, 20-aug-10 mcl4148, mcl4448 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction to ambient air mounted on epoxy-glass hard tissue, fig. 5, 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition part symbol min. ty p. max. unit forward voltage i f = 5 ma mcl4448 v f 620 720 mv i f = 50 ma mcl4148 v f 860 1000 mv i f = 100 ma mcl4448 v f 930 1000 mv reverse current v r = 20 v i r 25 na v r = 20 v, t j = 150 c i r 50 a v r = 75 v i r 5a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) 100 v diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 4pf rectification efficiency v hf = 2 v, f = 100 mhz r 45 % reverse recovery time i f = i r =10 ma, i r = 1 ma t rr 8ns i f = 10 ma, v r = 6 v, i r = 0.1 x i r , r l = 100 t rr 4ns figure 1. forward current vs. forward voltage 00.40. 8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 16641 mcl 414 8 scattering limit t j = 25 c figure 2. forward current vs. forward voltage 00.40. 8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f -for w ard v oltage ( v ) 2.0 16643 mcl 444 8 scattering limit t j =25 c
mcl4148, mcl4448 document number 85566 rev. 2.0, 20-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com figure 3. reverse current vs. reverse voltage figure 4. diode capacitance vs. reverse voltage figure 5. board for r thja definition (in mm) 1 10 100 1000 i r - re v erse c u rrent (na) v r - re v erse v oltage ( v ) 10 1 100 94 909 8 t j = 25 c scattering limit 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c d - diode capacitance (pf) 100 94 9099 2.5 v r - re v erse v oltage ( v ) f = 1 mhz t j = 25 c 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329
www.vishay.com 4 document number 85566 rev. 2.0, 20-aug-10 mcl4148, mcl4448 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter (inches): micromelf cathode indification s u rface plan 1 (0.039) glass glass s u rface plan 2 (0.079) 1. 8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > r2.5 (0.09 8 ) < 1.35 ( 0.053) 0.6 (0.024 ) foot print recommendation: reflo w soldering w a v e soldering 2.4 (0.094) 2. 8 (0.110) 0. 8 (0.031) 0. 8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.2 (0.047) 0. 8 (0.031) 1.4 (0.055) 1 (0.039) doc u ment no.:6.560-5007.01-4 re v . 13 - date: 07.j u ne.2006 96 12072 created - date: 26.j u ly.1996 * * the gap b et w een pl u g and glass can b e either on cathode or anode side
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